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Typical Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.15
1.10
1.05
1.00
0.95
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
T J , Junction Temperature [ C ]
T J , Junction Temperature [ C ]
0.90
0.85
-100
*Notes:
1. V GS = 0V
2. I D = 250 μ A
-50 0 50 100 150 200
o
0.5
0.0
-100
*Notes:
1. V GS = 10V
2. I D = 17.5A
-50 0 50 100 150 200
o
Figure 9. Maximum Safe Operating Area
300
Figure 10. Maximum Drain Current
vs. Case Temperature
40
100
100 μ s
10 μ s
1ms
30
10
DC
10ms
1. T C = 25 C
2. T J = 150 C
1
0.1
Operation in This Area
is Limited by R DS(on)
*Notes:
o
o
20
10
T C , Case Temperature [ C ]
0.01
1
3. Single Pulse
10 100
V DS , Drain-Source Voltage [V]
1000
0
25
50 75 100 125
o
150
Figure 11. Transient Thermal Response Curve
0.6
0.5
0.1
0.2
0.1
0.05
P DM
0.01
0.02
0.01
Single pulse
*Notes:
t 1
t 2
1. Z θ JC (t) = 0.4 C/W Max.
o
2. Duty Factor, D= t 1 /t 2
10
10
10
10
10
1
0.001
-5
-4
-3
-2
3. T JM - T C = P DM * Z θ JC (t)
-1
10
Rectangular Pulse Duration [sec]
t1, Rectangular Pulse Duration [sec]
?2009 Fairchild Semiconductor Corporation
FCH35N60 Rev. C1
4
www.fairchildsemi.com
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